Then, the key factors of blocking voltages, current gain, frequency response and power loss were analyzed by combining semiconductor physics and semiconductor device physics, together with Junction Termination Technology ( JTT), device design principles.
进而,根据半导体物理及半导体器件设计原则着重分析了影响器件击穿电压、电流增益、频率响应的主要因素,结合结终端技术分析和器件设计要点,设计一种新结构。
In the paper, an improved method for the simultaneous determination of GaAs FET noise figure and available power gain is given a method for the design of loss matching network and quantitative analysis of its loss is also presented.
本文给出了可同时测量GaAs FET噪声系数和资用功率增益的改进方法,以及对有耗匹配网络设计和损耗的定量分析方法。
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